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| NTD80N02 Power MOSFET 24 V, 80 A, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 5.0 mW ID MAX 80 A * Pb-Free Packages are Available www..com Typical Applications * * * * Power Supplies Converters Power Motor Controls Bridge Circuits G Unit Vdc Vdc Adc 4 Watts C mJ 12 3 N-Channel D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TC = 25C Drain Current - Single Pulse (tp = 10 ms) Total Power Dissipation @ TC = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 24 Vdc, VGS = 10 Vdc, IL = 17 Apk, L = 5.0 mH, RG = 25 ) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg EAS Value 24 20 80* 200 75 -55 to 150 733 S 4 4 12 3 12 3 C/W RJC RJA RJA TL 1.65 67 120 260 C CASE 369C CASE 369D CASE 369AA DPAK DPAK DPAK (Surface Mount) (Surface Mount) (Straight Lead) STYLE 2 STYLE 2 STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 80 N02 3 Source 1 Gate 2 Drain 3 Source = Year = Work Week = Device Code Publication Order Number: NTD80N02/D 4 Drain Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). *Chip current capability limited by package. 1 Gate See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2004 1 December, 2004 - Rev. 4 YWW 80 N02 2 Drain Y WW 80N02 ORDERING INFORMATION NTD80N02 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Positive Temperature Coefficient Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 24 Vdc) (VGS = 0 Vdc, VDS = 24 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Negative Threshold Temperature Coefficient www..com Drain-to-Source On-Resistance (Note 3) Static (VGS = 10 Vdc, ID = 80 Adc) (VGS = 4.5 Vdc, ID = 40 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 4.5 Vdc, ID = 20 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 3) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Ga e C a ge (VGS = 4.5 Vdc, 4 5 Vdc VDD = 20 Vdc, ID = 20 Adc, 2.5 RG = 2 5 ) (VGS = 4.5 Vdc, ID = 20 Adc, VDS = 20 Vdc) (Note 3) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 17 67 28 40 30 7.0 18 30 125 45 75 42 12 28 nC ns (VDS = 20 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss Coss Crss - - - 2250 900 400 2600 1100 525 pF gFS VGS(th) 1.0 - RDS(on) - - - - 5.0 7.5 5.0 7.5 20 5.8 9.0 5.8 9.0 - Mhos 1.9 -3.8 3.0 - Vdc mV/C m V(BR)DSS 24 - IDSS - - IGSS - - - - 1.0 10 100 nAdc 27 25 - - Vdc mV/C mAdc Symbol Min Typ Max Unit SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 40 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 150C) Reverse Recovery Time e e se eco e y e (IS = 20 Adc, VGS = 0 Vdc, Ad Vd dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. VSD - - - trr ta tb Qrr - - - - 0.92 1.05 0.70 38 20 18 0.038 1.2 - - 52 - - - mC ns s Vdc http://onsemi.com 2 NTD80N02 100 90 ID, DRAIN CURRENT (AMPS) 80 70 60 50 40 30 20 10 0 0 www..com 0.5 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 3.4 V 3.2 V VGS = 3.0 V 6.5 V 9V 8V 4.4 V 4.6 V 4.8 V 5V 5.2 V 6V TJ = 25C 4.2 V 4V 3.8 V 3.6 V 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 VDS 24 V ID, DRAIN CURRENT (AMPS) TJ = 25C TJ = 125C TJ = -55C 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 10 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0.015 TJ = 25C 0.01 VGS = 4.5 V VGS = 10 V 0.005 0 55 60 65 70 75 80 ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Gate-To-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE 0.015 0.0125 IDSS, LEAKAGE (nA) 0.01 0.0075 0.005 0.0025 0 -50 ID = 80 A VDS = 10 V ID = 80 A VDS = 4.5 V Figure 4. On-Resistance versus Drain Current and Gate Voltage 1000 VGS = 0 V 100 TJ = 125C TJ = 100C 10 1 TJ = 25C 0.1 -25 0 25 50 75 100 125 150 0.01 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 3 NTD80N02 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5000 VGS, GATE-TO-SOURCE VOLTAGE (V) VGS = 0 V TJ = 25C 10 28 8 VD Q1 Q2 QT VGS 24 20 16 4 12 8 2 ID = 1.0 A TJ = 25C 0 0 10 20 30 40 50 4 0 C, CAPACITANCE (pF) 4000 3000 Ciss 2000 Coss 1000 Crss 6 0 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 VGS VDS www..com GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1000 IS, SOURCE CURRENT (AMPS) VDD = 20 V ID = 20 A VGS = 10 V t, TIME (ns) 100 tr tf td(off) td(on) 80 70 60 50 40 30 20 10 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 VSD, SOURCE-TO-DRAIN VOLTAGE (V) VGS = 0 V TJ = 25C 10 1 1 10 RG, GATE RESISTANCE () 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTD80N02 100 ID , DRAIN CURRENT (AMPS) 100 ms di/dt VGS = 10 V SINGLE PULSE TC = 25C 1 ms IS trr ta 10 ms dc tp IS 10 100 0.25 IS tb TIME 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) www..com Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Diode Reverse Recovery Waveform 1000 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE DUTY CYCLE 100 D = 0.5 0.2 0.1 0.05 0.02 0.01 MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT 10 1 P(pk) t2 DUTY CYCLE, D = t1/t2 1E-03 1E-02 1E-01 t, TIME (seconds) 1E+00 t1 0.1 SINGLE PULSE 0.01 1E-05 1E-04 RJA(t) = r(t) RJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RJA(t) 1E+02 1E+03 1E+01 Figure 13. Thermal Response - Various Duty Cycles ORDERING INFORMATION Order Number NTD80N02 NTD80N02G NTD80N02T4 NTD80N02T4G NTD80N02-001 NTD80N02-1G NTD80N02-032 NTD80N02-032G Package DPAK-3 DPAK-3 (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK-3 Straight Lead DPAK-3 Straight Lead (Pb-Free) DPAK-3 Straight Lead (3.2 0.5 mm) DPAK-3 Straight Lead (3.2 0.5 mm) (Pb-Free) Shipping 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail 75 Units / Rail 75 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD80N02 PACKAGE DIMENSIONS DPAK CASE 369AA-01 ISSUE O -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.033 0.045 0.018 0.023 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.88 0.46 0.61 0.83 1.14 0.46 0.58 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S www..com 1 2 3 Z U F L D 2 PL J DIM A B C D E F J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTD80N02 PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- www..com S A 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTD80N02 PACKAGE DIMENSIONS DPAK CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING www..com PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTD80N02/D |
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